UHV high-resolution electron microscopy and chemical analysis of room-temperature Au deposition on Si„001...-231

نویسندگان

  • E. Landree
  • D. Grozea
چکیده

Investigations of Au on Si~001! have suggested that room-temperature deposition of Au on a clean Si surface results in an interfacial reaction and the formation of a gold-silicide. However, these investigations typically lack direct information about the surface morphology or the exact structure at the interface. Utilizing the capabilities of a surface chemical analysis system attached to a Hitachi UHV H-9000 microscope, a layer plus island growth mode has been observed by high-resolution electron microscopy showing multiply twinned small particles on the surface. The presence of small particles for various coverages has been correlated with the shifts seen in the Si 2p and Au 4 f binding energies as well as the peak splitting in the Si LVV Auger transition. Our chemical data are consistent with observed shifts in the binding energies of small metal clusters deposited on various substrates, and with the published data for this surface. In addition, the results are consistent with our previous studies of Ag on Si~001!, and indicate the growth morphology plays a crucial role in understanding spectroscopic information as well as its correlation to the structure and chemical state of the interface and surface morphology. @S0163-1829~97!08111-3#

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Structural and Optical Properties of ZnO Nanowires Doped with Magnesium

ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850 ◦C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscop...

متن کامل

Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology

We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (00 1) at room temperature on hydrogen-terminated Si (00 1) . In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5-20 nm of Cu film growth. Post-growth x-ray diffraction indicates ...

متن کامل

Ion Irradiation Induced Effects in Metal Nanostructures

High resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) are used to study the ion induced effects in Au, Ag nanostructures grown on Si and thermally grown SiO2 substrates. Au and Ag films (∼ 2 nm) are prepared by thermal evaporation under high vacuum condition at room temperature (RT). These films were irradiated with MeV Au ions also at RT. Ver...

متن کامل

Au-mediated low-temperature solid phase epitaxial growth of a SixGe1-x alloy on Si(001)

The evolution of microstructure during Au-mediated solid phase epitaxial growth of a SixGe12x alloy film on Si~001! was investigated by in situ sheet resistance measurements, x-ray diffraction, conventional and high-resolution transmission electron microscopy, energy dispersive x-ray spectroscopy, and Rutherford backscattering spectrometry. Annealing amorphous-Ge/Au bilayers on Si~001! to tempe...

متن کامل

KCl ultra-thin films with polar and non-polar surfaces grown on Si(111)7 × 7

The growth of ultra-thin KCl films on the Si(111)7 × 7 reconstructed surface has been investigated as a function of KCl coverage and substrate temperature. The structure and morphology of the films were characterized by means of scanning tunneling microscopy (STM) under ultra-high vacuum (UHV) conditions. Detailed analysis of the atomically resolved STM images of islands grown at room and high ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1997